NGTB03N60R2DT4G
Manufacturer:
On Semiconductor
Mfr.Part #:
NGTB03N60R2DT4G
Datasheet:
Description:
IGBTs DPAK-3 SMD/SMT Single 600 V 49 W 9 A
| Parameter | Value |
|---|---|
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 2.38 mm |
| Packaging | Reel |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 49 W |
| Power Dissipation | 49 W |
| Max Collector Current | 9 A |
| Collector Emitter Breakdown Voltage | 600 V |
| Reverse Recovery Time | 65 ns |
| Continuous Collector Current | 9 A |
| Element Configuration | Single |
| Collector Emitter Voltage (VCEO) | 600 V |
| Max Breakdown Voltage | 600 V |
| Collector Emitter Saturation Voltage | 1.7 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Maximum Gate Emitter Voltage | 20 V |
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